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| Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0300 Features * Cascadable 50 Gain Block * 3 dB Bandwidth: DC to 2.8 GHz * 12.0 dB Typical Gain at 1.0 GHz * 10.0 dBm Typical P 1 dB at 1.0 GHz The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400C and either wedge or ball bonding using 0.7 mil gold wire.[1] See APPLICATIONS section, "Chip Use". Chip Outline[1] Description The MSA-0300 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications. Note: 1. This chip contains additional biasing options. The performance specified applies only to the bias option whose bond pads are indicated on the chip outline. Refer to the APPLICATIONS section "Silicon MMIC Chip Use" for additional information. Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) C block IN MSA C block OUT Vd = 5 V 5965-9565E 6-290 MSA-0300 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 425 mW +13 dBm 200C -65 to 200C Thermal Resistance[2,4]: jc = 45C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting Surface (TMS) = 25C. 3. Derate at 22.2 mW/C for TC > 181C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications[1], TA = 25C Symbol GP GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions[2]: Id = 35 mA, ZO = 50 Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 3.0 GHz f = 0.1 to 3.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 0.1 GHz f = 0.1 to 1.8 GHz Units dB dB GHz Min. Typ. 12.5 0.6 2.8 1.8:1 1.8:1 Max. dB dBm dBm psec V mV/C 4.5 6.0 10.0 23.0 125 5.0 -8.0 5.5 Notes: 1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current is on the following page. 2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration. Part Number Ordering Information Part Number MSA-0300-GP4 Devices Per Tray 100 6-291 MSA-0300 Typical Scattering Parameters[1] (ZO = 50 , TA = 25C, Id = 35 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .13 .13 .12 .11 .11 .10 .11 .16 .23 .29 .35 .38 .41 .43 -179 -179 -179 -177 -172 -166 -145 -140 -141 -149 -157 -164 179 153 12.6 12.6 12.5 12.5 12.4 12.4 12.0 11.5 10.8 9.8 8.7 7.6 5.5 3.6 4.28 4.27 4.24 4.22 4.19 4.15 4.00 3.76 3.47 3.10 2.72 2.40 1.88 1.51 177 172 165 158 152 144 126 109 97 82 67 55 35 18 -18.6 -18.3 -18.3 -18.2 -17.8 -17.7 -17.1 -16.2 -15.6 -15.2 -14.5 -14.3 -13.7 -13.3 .118 .121 .121 .123 .129 .130 .139 .154 .166 .173 .188 .193 .206 .217 2 3 5 8 11 1 1 2 2 24 21 22 17 14 .09 .10 .12 .14 .17 .20 .24 .27 .28 .28 .27 .25 .21 .21 -13 -27 -48 -65 -76 -85 -104 -122 -133 -145 -148 -146 -134 -137 1.21 1.19 1.19 1.18 1.15 1.14 1.09 1.03 0.99 0.99 0.97 1.00 1.14 1.27 Note: 1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS section. Typical Performance, TA = 25C (unless otherwise noted) 14 12 10 G p (dB) G p (dB) 14 Gain Flat to DC 13 12 11 GP 11 10 P1 dB (dBm) 12 8 6 4 G p (dB) 10 P1 dB 9 8 8 0.1 GHz 0.5 GHz 1.0 GHz 2.0 GHz 15 20 25 30 I d (mA) 35 40 50 NF (dB) 7 6 NF 5 4 -55 -25 +25 +85 +125 6 2 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) 4 TEMPERATURE (C) Figure 1. Typical Power Gain vs. Frequency, TA = 25C, Id = 35 mA. Figure 2. Power Gain vs. Current. Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature, f = 1.0 GHz, Id = 35 mA. 18 15 7.0 6.5 P1 dB (dBm) 12 9 I d = 50 mA NF (dB) 6.0 I d = 35 mA 6 5.5 3 I d = 20 mA 0 0.1 0.2 0.3 5.0 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 I d = 20 mA I d = 35 mA I d = 50 mA 1.0 2.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression vs. Frequency. Figure 5. Noise Figure vs. Frequency. 6-292 MSA-0300 Chip Dimensions NOT APPLICABLE INPUT 365 m 14.4 mil GROUND OPTIONAL [1] OUTPUT 365 m 14.4 mil Unless otherwise specified, tolerances are 13 m / 0.5 mils. Chip thickness is 5.5 0.5 mils. Bond Pads are 41 m / 1.6 mil typical on each side. Note 1: Output contact is made by die attaching the backside of the die. 6-293 |
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